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Model:am2729,125 🔎
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Descr: . Electronic Components Datasheets Active components Transistors ST am2729,125.pdf
Group:Electronics > Components > Transistors
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AM2729-125 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS . . REFRACTORY/GOLD METALLIZATION . . EMITTER SITE BALLASTED LOW THERMAL RESISTANCE . . INPUT/OUTPUT MATCHING OVERLAY GEOMETRY . METAL/CERAMIC HERMETIC PACKAGE POUT = 125 W MIN. WITH 7.0 dB GAIN .400 x .500 2LFL (S038) hermetically sealed ORDER CODE BRANDING DESCRIPTION AM2729-125 2729-125 The AM2729-125 device is a high power silicon bipolar NPN transistor specifically designed for medium pulse S-Band radar output and driver PIN CONNECTION applications. This device is characterized at 50

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