Philips bfg480w free download

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DISCRETE SEMICONDUCTORS DATA SHEET M3D124 BFG480W NPN wideband transistor Product specification 1998 Oct 21 Supersedes data of 1998 Jul 09 NXP Semiconductors Product specification NPN wideband transistor BFG480W FEATURES PINNING High power gain PIN DESCRIPTION High efficiency 1 emitter Low noise figure 2 base High transition frequency 3 emitter Emitter is thermal lead 4 collector Low feedback capacitance Linear and non-linear operation. handbook, halfpage 3 4 APPLICATIONS RF front end with high linearity system demands (CDMA) 2 1 Common emitter class AB driver. Top view MSB842 DESCRIPTION Marking code: P6. NPN double polysilicon wideband transistor with buried layer for low voltage applications in a 4-pin dual-emitter Fig.1 Simplified outline SOT343R. SOT343R plastic package. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCEO collector-emitter voltage open base 4.5 V IC collector current (DC) 80 250 mA Ptot total power dissipation Ts 60 C 360 mW fT transition frequency IC = 80 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 C 21 GHz Gmax maximum gain IC = 80 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 C 16 dB F noise figure IC = 8 mA; VCE = 2 V; f = 2 GHz; S = opt 1.8 dB Gp power gain Pulsed; class-AB; < 1 : 2; tp = 5 ms; 13.5 dB VCE = 3.6 V; f = 2 GHz; PL = 100 mW C coll