File information: | |
File name: | bsh120t-01.pdf [preview bsh120t-01] |
Size: | 357 kB |
Extension: | |
Mfg: | Philips |
Model: | bsh120t-01 🔎 bsh120t01 |
Original: | bsh120t-01 🔎 |
Descr: | . Electronic Components Datasheets Active components Transistors Philips bsh120t-01.pdf |
Group: | Electronics > Components > Transistors |
Uploaded: | 31-05-2020 |
User: | Anonymous |
Multipart: | No multipart |
Information about the files in archive: | ||
Decompress result: | OK | |
Extracted files: | 1 | |
File name bsh120t-01.pdf BSH120T N-channel enhancement mode field-effect transistor Rev. 01 -- 06 September 2000 Product specification M3D186 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOSTM1 technology. Product availability: BSH120T in SOT54 (TO-92). 2. Features s TrenchMOSTM technology s Low on-state resistance s Very fast switching s Logic level compatible. 3. Applications s Relay drivers c s DC to DC converters c s Logic level translators. 4. Pinning information Table 1: Pinning - SOT54, simplified outline and symbol Pin Description Simplified outline Symbol 1 source (s) d 2 drain (d) 3 gate (g) g 03ab40 3 21 MBB076 s SOT54 (TO-92) 1. TrenchMOS is a trademark of Royal Philips Electronics. Philips Semiconductors BSH120T N-channel enhancement mode field-effect transistor 5. Quick reference data Table 2: Quick reference data Symbol Parameter Conditions Typ Max Unit VDS drain-source voltage (DC) Tj = 25 to 150 |
Date | User | Rating | Comment |