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BUT100 HIGH POWER NPN SILICON TRANSISTOR s SGS-THOMSON PREFERRED SALESTYPE s NPN TRANSISTOR s HIGH CURRENT CAPABILITY s FAST SWITCHING SPEED s HIGH RUGGEDNESS APPLICATION s MOTOR CONTROL s UNINTERRUPTABLE POWER SUPPLY 1 2 DESCRIPTION The BUT100 is a Multiepitaxial Planar NPN Transistor in TO-3 package. It is intended for use TO-3 in high frequency and efficency converters, (version " S ") switching regulators and motor control. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CEV Collector-Emitter Voltage (V BE = -1.5V) 200 V V CEO Collector-Emitter Voltage (I B = 0) 125 V V EBO Emitter-Base Voltage (I C = 0) 7 V IE Emitter Current 50 A I EM Emitter Peak Current 150 A IB Base Current 10 A I BM Base Peak Current 30 A P tot Total Dissipation at T c < 25 o C 300 W o T stg Storage Temperature -65 to 200 C o Tj Max. Operating Junction Temperature 200 C April 1997 1/4 BUT100 THERMAL DATA o R thj-case Thermal Resistance Junction-case Max 0.58 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit I CER Collector Cut-off V CE = V CEV 1 mA o Current (R BE = 5) V CE = V CEV T C = 100 C 5 mA I CEV Collector Cut-off V CE = V CEV V BE = -1.5V 1 mA Current V CE = VCEV V BE = -1.5V TC