Philips bfq34 cnv 2 free download

File name bfq34_cnv_2.pdf

DISCRETE SEMICONDUCTORS DATA SHEET BFQ34 NPN 4 GHz wideband transistor Product specification September 1995 File under Discrete Semiconductors, SC14 Philips Semiconductors Product specification NPN 4 GHz wideband transistor BFQ34 DESCRIPTION PINNING NPN transistor encapsulated in a 4 PIN DESCRIPTION lead SOT122A envelope with a Code: BFQ34/01 ceramic cap. All leads are isolated lfpage 4 from the stud. 1 collector 2 emitter 1 3 It is primarily intended for driver and final stages in MATV system 3 base amplifiers. It is also suitable for use in 4 emitter low power band IV and V equipment. 2 Diffused emitter-ballasting resistors and the application of gold sandwich Top view MBK187 metallization ensure an optimum temperature profile and excellent reliability properties. The device also features high output voltage Fig.1 SOT122A. capabilities. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCBO collector-base voltage open emitter - 25 V VCEO collector-emitter voltage open base - 18 V IC collector current - 150 mA Ptot total power dissipation up to Tc = 160