KEC kmb4d0n30sa free download

File name kmb4d0n30sa.pdf

SEMICONDUCTOR KMB4D0N30SA TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche E characteristics. It is mainly suitable for portable equipment. L B L DIM MILLIMETERS A _ 2.93 + 0.20 B 1.30+0.20/-0.15 FEATURES C 1.30 MAX D 2 3 D 0.40+0.15/-0.05 VDSS=30V, ID=4A A G E 2.40+0.30/-0.20 H 1 G 1.90 Drain-Source ON Resistance H 0.95 RDS(ON)=47m (Max.) @ VGS=10V J 0.13+0.10/-0.05 K 0.00 ~ 0.10 RDS(ON)=65m (Max.) @ VGS=4.5V P P