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SEMICONDUCTOR KMB4D0N30SA
TECHNICAL DATA N-Ch Trench MOSFET
General Description
This Trench MOSFET has better characteristics, such as fast switching
time, low on resistance, low gate charge and excellent avalanche
E
characteristics. It is mainly suitable for portable equipment. L B L
DIM MILLIMETERS
A _
2.93 + 0.20
B 1.30+0.20/-0.15
FEATURES C 1.30 MAX
D
2 3 D 0.40+0.15/-0.05
VDSS=30V, ID=4A
A
G
E 2.40+0.30/-0.20
H
1 G 1.90
Drain-Source ON Resistance H 0.95
RDS(ON)=47m (Max.) @ VGS=10V J 0.13+0.10/-0.05
K 0.00 ~ 0.10
RDS(ON)=65m (Max.) @ VGS=4.5V P P
L 0.55
M 0.20 MIN
Super High Dense Cell Design N 1.00+0.20/-0.10
N
C
P 7
J
M
K
SOT-23
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL N-Ch UNIT
Drain-Source Voltage VDSS 30 V
Gate-Source Voltage VGSS 20 V
DC@TA=25 4.0
I D*
Drain Current DC@TA=70 3.5 A KNA
Pulsed IDP* 20
Drain-Source-Diode Forward Current IS 1.04 A
TA=25 1.25
Drain Power Dissipation PD* W
TA=70 0.8
Maximum Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
Thermal Resistance, Junction to Ambient RthJA* 100 /W
Note > *Surface Mounted on 1 1 FR4 Board, t