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File name: | stu10nc70z.pdf [preview stu10nc70z] |
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Descr: | . Electronic Components Datasheets Active components Transistors ST stu10nc70z.pdf |
Group: | Electronics > Components > Transistors |
Uploaded: | 02-06-2020 |
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File name stu10nc70z.pdf STU10NC70Z STU10NC70ZI N-CHANNEL 700V - 0.58 - 9.4A Max220/I-Max220 Zener-Protected PowerMESHTMIII MOSFET TYPE VDSS RDS(on) ID STU10NC70Z 700 V <0.75 9.4 A STU10NC70ZI 700 V <0.75 9.4 A s TYPICAL RDS(on) = 0.58 s EXTREMELY HIGH dv/dt CAPABILITY s GATE-TO-SOURCE ZENER DIODES 3 s 100% AVALANCHE TESTED 2 1 s VERY LOW INTRINSIC CAPACITANCES s GATE CHARGE MINIMIZED Max220 I-Max220 DESCRIPTION The third generation of MESH OVERLAYTM Power MOSFETs for very high voltage exhibits unsur- passed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capabil- ity with higher ruggedness performance as request- ed by a large variety of single-switch applications. APPLICATIONS s SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION s WELDING EQUIPMENT ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit STU10NC70Z STU10NC70ZI VDS Drain-source Voltage (VGS = 0) 700 V VDGR Drain-gate Voltage (RGS = 20 k) 700 V VGS Gate- source Voltage |
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