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STP22NM60 - STF22NM60 STB22NM60 - STB22NM60-1 - STW22NM60 N-CHANNEL 600V - 0.19 - 22A TO-220/FP/D2PAK/I2PAK/TO-247 MDmeshTMPower MOSFET ADVANCED DATA TYPE VDSS RDS(on) Rds(on)*Qg ID STP22NM60 600 V < 0.25 7.6 *nC 22 A STF22NM60 600 V < 0.25 7.6 *nC 22 A STB22NM60 600 V < 0.25 7.6 *nC 22 A 3 3 < 0.25 *nC 2 2 STB22NM60-1 600 V 7.6 22 A 1 1 STW22NM60 600 V < 0.25 7.6 *nC 22 A TO-220 TO-220FP s TYPICAL RDS(on) = 0.19 s HIGH dv/dt AND AVALANCHE CAPABILITIES 2 3 1 s 100% AVALANCHE TESTED TO-247 s LOW INPUT CAPACITANCE AND GATE CHARGE 3 3 s LOW GATE INPUT RESISTANCE 12 1 I2PAK D2PAK DESCRIPTION This improved version of MDmeshTM which is based on Multiple Drain process represents the new bench- INTERNAL SCHEMATIC DIAGRAM mark in high voltage MOSFETs. The resulting product exhibits even lower on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique yields overall performances that are significantly better than that of similar competition's products. APPLICATIONS The MDmeshTM family is very suitable for increasing power density of high voltage converters allowing sys- tem miniaturization and higher efficiencies. ORDERING INFORMATION SALES TYPE MARKING PACKAGE PACKAGING STP22NM60 P22NM60 TO-220 TUBE STF22NM60 F22NM60 TO-220FP TUBE STB22NM60 B22NM60T4 D