ST stgd3nb60h free download

File name stgd3nb60h.pdf

STGD3NB60H N-CHANNEL 3A - 600V - DPAK PowerMESHTM IGBT TYPE VCES VCE(sat) IC STD3NB60H 600 V < 2.8 V 3A s HIGH INPUT IMPEDANCE s LOW ON-VOLTAGE DROP (Vcesat) s OFF LOSSES INCLUDE TAIL CURRENT 3 s LOW GATE CHARGE 1 s HIGH CURRENT CAPABILITY s VERY HIGH FREQUENCY OPERATION s CO-PACKAGED WITH TURBOSWITCHT DPAK s TYPICAL SHORT CIRCUIT WITHSTAND TIME 5MICROS S-family, 4 micro H family s ANTIPARALLEL DIODE DESCRIPTION INTERNAL SCHEMATIC DIAGRAM Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has de- signed an advanced family of IGBTs, the Power- MESHTM IGBTs, with outstanding perfomances. The suffix "H" identifies a family optimized for high frequency applications (up to 50kHz)in order to achieve very high switching performances (reduced tfall) mantaining a low voltage drop. APPLICATIONS s HIGH FREQUENCY MOTOR CONTROLS s SMPS and PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCES Collector-Emitter Voltage (VGS = 0) 600 V VECR Emitter-Collector Voltage 20 V VGE Gate-Emitter Voltage