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DISCRETE SEMICONDUCTORS DATA SHEET BFG591 NPN 7 GHz wideband transistor Product specification 1995 Sep 04 Supersedes data of November 1992 NXP Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 FEATURES DESCRIPTION High power gain NPN silicon planar epitaxial transistor lfpage 4 Low noise figure in a plastic, 4-pin SOT223 package. High transition frequency Gold metallization ensures PINNING excellent reliability. PIN DESCRIPTION 1 emitter APPLICATIONS 2 base Intended for applications in the GHz 3 emitter 1 2 3 range such as MATV or CATV 4 collector Top view MSB002 - 1 amplifiers and RF communications subscriber equipment. Fig.1 SOT223. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter 20 V VCEO collector-emitter voltage open base 15 V IC collector current (DC) 200 mA Ptot total power dissipation up to Ts = 80 C; note 1 2 W hFE DC current gain IC = 70 mA; VCE = 8 V 60 90 250 Cre feedback capacitance IC = Ic = 0; VCE = 12 V; f = 1 MHz 0.7 pF fT transition frequency IC = 70 mA; VCE = 12 V; f = 1 GHz 7 GHz GUM maximum unilateral power IC = 70 mA; VCE = 12 V; 13 dB gain f = 900 MHz; Tamb = 25 C 2 insertion power gain IC = 70 mA; VCE = 12 V; 12 dB s 21 f = 900 MHz; Tamb = 25 C Note 1. Ts is the temperature at the soldering point of the collector pin. 1995 Sep 04 2 NXP Semiconduc