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STW77N65M5 N-channel 650 V, 0.033 , 69 A, MDmeshTM V Power MOSFET TO-247 Features VDSS Type RDS(on) max ID @TjMAX STW77N65M5 710 V < 0.038 69 A TO-247 worldwide best RDS(on) Higher VDSS rating 3 2 Higher dv/dt capability 1 Excellent switching performance TO-247 Easy to drive 100% avalanche tested Application Figure 1. Internal schematic diagram Switching applications Description MDmesh V is a revolutionary Power MOSFET technology, which combines an innovative proprietary vertical process with the well known company`s PowerMESHTM horizontal layout. The resulting product has an extremely low on- resistance, unmatched among silicon-based Power MOSFETs, making it especially suited for applications which require superior power density and outstanding efficiencies. Table 1. Device summary Order codes Marking Package Packaging STW77N65M5 77N65M5 TO-247 Tube July 2009 Doc ID 15322 Rev 2 1/13 www.st.com 13 Contents STW77N65M5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ... 5 3 Test circuits ... 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/13 Doc ID 15322 Rev 2 STW77N65M5 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VGS Gate- source voltage 25 V