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STY112N65M5 N-channel 650 V, 0.019 96 A, MDmeshTM V Power MOSFET , Max247 Features VDSS Order code RDS(on) max ID @TjMAX STY112N65M5 710 V < 0.022 96 A Max247 worldwide best RDS(on) Higher VDSS rating 3 2 Higher dv/dt capability 1 Excellent switching performance Max247 Easy to drive 100% avalanche tested Application Figure 1. Internal schematic diagram Switching applications Description The device is an N-channel MDmeshTM V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics' well-known PowerMESHTM horizontal layout structure. The resulting product has extremely low on- resistance, which is unmatched among silicon- based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. Table 1. Device summary Order code Marking Package Packaging STY112N65M5 112N65M5 Max247 Tube May 2011 Doc ID 15321 Rev 2 1/12 www.st.com 12 Contents STY112N65M5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ... 6 3 Test circuits ... 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 Doc ID 15321 Rev 2 STY112N65M5 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VGS Gate- s