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File name: | bfg480w_1880drv.pdf [preview bfg480w 1880drv] |
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File name bfg480w_1880drv.pdf Philips Semiconductors 1880 MHz PA Driver with BFG480W 1880 MHz PA Driver with BFG480W Application Note JL-9902v0 Author Jarek Lucek June 1, 1999 Discrete Semiconductors - Mansfield 171 Forbes Blvd. Mansfield, MA 02048 Abstract th BFG480W, the new 5 generation transistor from Philips Semiconductors, is well suited for PA driver applications in AMPS, TDMA, CDMA and GSM systems. BFG80W's performance is superior at 1880 MHz, 3.6V applications. Under CW mode, the part is capable of P1dB=20dBm, efficiency of over 40% and typical Gp of 15 dB. BFG480W delivers 20 dBm of linear output power under TDMA with a typical G of 15 dB and efficiency of above 30%. p Under CDMA mode, BFG480W delivers 19 dBm of linear output power with a typical G of above 15 dB and p efficiency of 30%. Philips Semiconductors 1880 MHz PA Driver with BFG480W INTRODUCTION BFG480W is Philips Semiconductors' 5th generation silicon bipolar RF wideband transistor in a SOT343R plastic SMD package. The transistor delivers superior performance at frequencies below 3 GHz. It is manufactured according to the double poly process and characterised by a high transition frequency (fT > 20 GHz) at low sub 3 Volt supply voltages. This application notes describes BFG480W performance at 1880 MHz operation under CW, 2 Tone, TDMA and CDMA conditions. PERFORMANCE OVERVIEW The table below summarises BFG480W's typical performance capabilities under different signal conditions. P1dB or Plinear* Gain** Efficiency*** System Vsupply dBm dB % Icq=10mA Icq=20mA Icq=10mA Icq=20mA Icq=10mA Icq=20mA 3.0 Volts 19 20 14.5 14.7 37 37 CW 3.6 Volts 21 21 14.9 14.8 38 36 3.0 Volts 16 15.5 15 15.5 27 24 2Tone 3.6 Volts 17.5 16. |
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