HT Semiconductor ktd1302 free download

File name ktd1302.pdf

KTD1302 TRANSISTOR (NPN) SOT-89-3L FEATURES Small Flat Package 1. BASE Audio Muting Application 2. COLLECTOR High Emitter-Base Voltage 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 12 V IC Collector Current 300 mA PC Collector Power Dissipation 500 mW RJA Thermal Resistance From Junction To Ambient 250 /W Tj Junction Temperature 150 Tstg Storage Temperature -55~+150 ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=0.1mA,IE=0 25 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 20 V Emitter-base breakdown voltage V(BR)EBO IE=0.1mA,IC=0 12 V Collector cut-off current ICBO VCB=25V,IE=0 100 nA Emitter cut-off current IEBO VEB=12V,IC=0 100 nA hFE(1) (FOR) VCE=2V, IC=4mA 200 800 DC current gain hFE(2)(REV) VCE=2V, IC=4mA 20 Collector-emitter saturation voltage VCE(sat) IC=100mA,IB=10mA 0.25 V Base-emitter saturation voltage VBE(sat) IC=100mA,IB=10mA 1 V Collector output capacitance Cob VCB=10V,IE=0, f=1MHz 10 pF VCE=10V,IC=1mA, Transition frequency fT 60