LGE mpsa17 free download

File name mpsa17.pdf

MPSA17 TO-92 Transistor (NPN) TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features High V(BR)EBO : 12V MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCEO Collector-Ease Voltage 40 V VEBO Emitter-Base Voltage 12 V IC Collector Current -Continuous 0.1 A PC Collector Power Dissipation 300 mW Dimensions in inches and (millimeters) Tj Junction Temperature 150 Tstg Storage Temperature -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-emitter breakdown voltage V(BR)CEO IC= 1mA, IE=0 40 V Emitter-base breakdown voltage V(BR)EBO IE= 100A, IC=0 12 V Collector cut-off current ICBO VCB=30V, IE=0 0.1 A Emitter cut-off current IEBO VEB=10V, IC=0 0.1 A DC current gain hFE VCE=10V, IC=5mA 200 800 Collector-emitter saturation voltage VCE(sat) IC= 10mA, IB=1mA 0.25 V Transition frequency fT VCE=10V,IC=5mA,f=100MHz 80 MHz Collector output capacitance Cob VCB=10V,IE=0,f=1MHz 4 pF MPSA17 TO-92 Transistor (NPN) Typical Characteristics