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MPSA17
TO-92 Transistor (NPN)
TO-92
1. EMITTER
2. BASE
3. COLLECTOR
Features
High V(BR)EBO : 12V
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCEO Collector-Ease Voltage 40 V
VEBO Emitter-Base Voltage 12 V
IC Collector Current -Continuous 0.1 A
PC Collector Power Dissipation 300 mW Dimensions in inches and (millimeters)
Tj Junction Temperature 150
Tstg Storage Temperature -55 to +150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN MAX UNIT
Collector-emitter breakdown voltage V(BR)CEO IC= 1mA, IE=0 40 V
Emitter-base breakdown voltage V(BR)EBO IE= 100A, IC=0 12 V
Collector cut-off current ICBO VCB=30V, IE=0 0.1 A
Emitter cut-off current IEBO VEB=10V, IC=0 0.1 A
DC current gain hFE VCE=10V, IC=5mA 200 800
Collector-emitter saturation voltage VCE(sat) IC= 10mA, IB=1mA 0.25 V
Transition frequency fT VCE=10V,IC=5mA,f=100MHz 80 MHz
Collector output capacitance Cob VCB=10V,IE=0,f=1MHz 4 pF
MPSA17
TO-92 Transistor (NPN)
Typical Characteristics