File information: | |
File name: | am1214,200.pdf [preview am1214,200] |
Size: | 57 kB |
Extension: | |
Mfg: | ST |
Model: | am1214,200 🔎 |
Original: | am1214,200 🔎 |
Descr: | . Electronic Components Datasheets Active components Transistors ST am1214,200.pdf |
Group: | Electronics > Components > Transistors |
Uploaded: | 05-06-2020 |
User: | Anonymous |
Multipart: | No multipart |
Information about the files in archive: | ||
Decompress result: | OK | |
Extracted files: | 1 | |
File name am1214,200.pdf AM1214-200 RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS . . REFRACTORY/GOLD METALLIZATION PRELIMINARY DATA . . EMITTER SITE BALLASTED LOW THERMAL RESISTANCE . . INPUT/OUTPUT MATCHING OVERLAY GEOMETRY . METAL/CERAMIC HERMETIC PACKAGE P OUT = 200 W MIN. WITH 7.0 dB GAIN .400 x .500 2LFL (M205) hermetically sealed ORDER CODE BRANDING AM1214-200 1214-200 PIN CONNECTION DESCRIPTION The AM1214-200 device is a high power Class C transistor specifically designed for L-Band Radar pulsed output and driver applications. This device is capable of operation over a wide range of pulse widths, duty cycles and tempera- tures, and wiil tolerate severe mismatch and over- drive conditions. Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency. AM1214-200 is supplied in the BIGPACTM hermetic 1. Collector 3. Emitter metal/ceramic package with internal input/output 2. Base 4. Base matching structures. ABSOLUTE MAXIMUM RATINGS (T case = 25 |
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