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STW34NB20 N-CHANNEL 200V - 0.062 - 34A TO-247 PowerMESHTM MOSFET Table 1. General Features Figure 1. Package Type VDSS RDS(on) ID STW34NB20 200 V < 0.075 34 A FEATURES SUMMARY TYPICAL RDS(on) = 0.062 EXTREMELY HIGH dv/dt CAPABILITY 3 100% AVALANCHE TESTED 2 VERY LOW INTRINSIC CAPACITANCES 1 GATE CHARGE MINIMIZED TO-247 DESCRIPTION Using the latest high voltage MESH OVERLAYTM process, STMicroelectronics has designed an ad- vanced family of power MOSFETs with outstand- Figure 2. Internal Schematic Diagram ing performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switch- ing characteristics. APPLICATIONS SWITCH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE HIGH CURRENT, HIGH SPEED SWITCHING Table 2. Order Codes Part Number Marking Package Packaging STW34NB20 W34NB20 TO-247 TUBE REV. 2 April 2004 1/10 STW34NB20 Table 3. Absolute Maximum Ratings Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 200 V VDGR Drain- gate Voltage (RGS = 20 k) 200 V VGS Gate-source Voltage