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STL17N3LLH6 N-channel 30 V, 0.0038 17 A PowerFLATTM(3.3x3.3) , STripFETTM VI DeepGATETM Power MOSFET Features RDS(on) Order code VDSS ID max. STL17N3LLH6 30 V 0.0045 17 A (1) 1. The value is rated according Rthj-pcb RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) PowerFLATTM (3.3 x 3.3) High avalanche ruggedness Low gate drive power losses Very low switching gate charge Application Figure 1. Pin-out configuration 1 2 3 4 Switching applications S S S G Description This product utilizes the 6th generation of design rules of ST's proprietary STripFETTM technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in a standard package, that makes it suitable for the most demanding DC-DC converter applications, where D D D D high power density has to be achieved. 8 7 6 5 BOTTOM VIEW Table 1. Device summary Order code Marking Package Packaging STL17N3LLH6 17N3L PowerFLATTM (3.3 x 3.3) Tape and reel November 2010 Doc ID 15535 Rev 3 1/13 www.st.com 13 Contents STL17N3LLH6 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ... 6 3 Test circuits ... 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 Doc ID 15535 Rev 3 STL17N3LLH6 Electrical ratings 1 Electrical rati