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STL17N3LLH6
N-channel 30 V, 0.0038 17 A PowerFLATTM(3.3x3.3)
,
STripFETTM VI DeepGATETM Power MOSFET
Features
RDS(on)
Order code VDSS ID
max.
STL17N3LLH6 30 V 0.0045 17 A (1)
1. The value is rated according Rthj-pcb
RDS(on) * Qg industry benchmark
Extremely low on-resistance RDS(on) PowerFLATTM (3.3 x 3.3)
High avalanche ruggedness
Low gate drive power losses
Very low switching gate charge
Application Figure 1. Pin-out configuration
1 2 3 4
Switching applications S S S G
Description
This product utilizes the 6th generation of design
rules of ST's proprietary STripFETTM technology,
with a new gate structure. The resulting Power
MOSFET exhibits the lowest RDS(on) in a standard
package, that makes it suitable for the most
demanding DC-DC converter applications, where D D D D
high power density has to be achieved. 8 7 6 5
BOTTOM VIEW
Table 1. Device summary
Order code Marking Package Packaging
STL17N3LLH6 17N3L PowerFLATTM (3.3 x 3.3) Tape and reel
November 2010 Doc ID 15535 Rev 3 1/13
www.st.com 13
Contents STL17N3LLH6
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 6
3 Test circuits .............................................. 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2/13 Doc ID 15535 Rev 3
STL17N3LLH6 Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage (VGS = 0) 30 V
VGS Gate-source voltage