ST am80610-03 free download

File name am80610-03.pdf

AM80610-030 RF & MICROWAVE TRANSISTORS UHF COMMUNICATIONS APPLICATIONS . . REFRACTORY/GOLD METALLIZATION . . EMITTER SITE BALLASTED INPUT/OUTPUT MATCHING . METAL/CERAMIC HERMETIC PACKAGE POUT = 30 W MIN. WITH 8.5 dB GAIN .400 x .400 2NLF L (S042) hermetically sealed ORDER CODE BRANDING AM80610-030 80610-30 DESCRIPTION PIN CONNECTION The AM80610-030 is a high power, common base NPN silicon bipolar device optimized for CW operation in the 620 - 960 MHz frequency range. AM80610-030 utilizes a rugged, overlay, emitter- ballasted L-Band die geometry to achieve high gain and collector efficiency and is suitable for driver or output stage use in Class C power am- plifiers. Typical applications include military com- munications, ECM, and test equipment. The AM80610-030 is provided in the industry- standard, metal/ceramic AMPACTM hermetic 1. Collector 3. Emitter package. 2. Base 4. Base ABSOLUTE MAXIMUM RATINGS (T case = 25