Philips bf1206f free download

File name bf1206f.pdf

BF1206F Dual N-channel dual gate MOSFET Rev. 01 -- 30 January 2006 Product data sheet 1. Product profile 1.1 General description The BF1206F is a combination of two different dual gate MOSFET amplifiers with shared source and gate2 leads. The source and substrate are interconnected. Internal bias circuits enable Direct Current (DC) stabilization and a very good cross-modulation performance during Automatic Gain Control (AGC). Integrated diodes between the gates and source protect against excessive input voltage surges. The transistor is encapsulated in a SOT666 micro-miniature plastic package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features s Two low noise gain controlled amplifiers in a single package s Superior cross-modulation performance during AGC s High forward transfer admittance s High forward transfer admittance to input capacitance ratio s Suited for 3 volt applications 1.3 Applications s Gain controlled low noise amplifiers for Very High Frequency (VHF) and Ultra High Frequency (UHF) applications with 3 V supply voltage, such as digital and analog television tuners Philips Semiconductors BF1206F Dual N-channel dual gate MOSFET 1.4 Quick reference data Table 1: Quick reference data Per MOSFET unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage (DC) - - 6 V ID drain current (DC) - - 30 mA |yfs| forward transfer admittance ID = 4 mA amplifier A 17 22 32 mS amplifier B 17 22 32 mS Ciss(G1) input capacitance at gate1 ID = 4 mA; f = 100 MHz amplifier A - 2.4