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STN1N20 N-channel 200 V, 1.2 1 A, SOT-223 , MESH OVERLAYTM Power MOSFET Features Type VDSS RDS(on) max ID STN1N20 200 V < 1.5 1A 4 100% avalanche tested 3 2 Application 1 SOT-223 Switching applications Description This device is an N-channel Power MOSFET developed using the latest high voltage MESH OVERLAYTM process. The new patented STrip layout coupled with the company's proprietary Figure 1. Internal schematic diagram edge termination structure, makes it suitable in converters for lighting applications. Table 1. Device summary Order code Marking Package Packaging STN1N20 N1N20 SOT-223 Tape and reel June 2011 Doc ID 6772 Rev 3 1/12 www.st.com 12 Contents STN1N20 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ... 6 3 Test circuits ... 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 Doc ID 6772 Rev 3 STN1N20 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS =0) 200 V VGS Gate-source voltage