ST sts3c3f30l free download

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STS3C3F30L N-CHANNEL 30V - 0.050 - 3.5A SO-8 P-CHANNEL 30V - 0.140 - 3A SO-8 STripFETTM II POWER MOSFET TYPE VDSS RDS(on) ID STS3C3F30L(N-Channel) 30 V < 65 m 3.5 A STS3C3F30L(P-Channel) 30 V < 165 m 3A s TYPICAL RDS(on) (N-Channel) = 50 m s TYPICAL RDS(on) (P-Channel) = 140 m s STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY s LOW THRESHOLD DRIVE DESCRIPTION SO-8 This application specific Power MOSFET is the second generation of STMicroelectronis unique "Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing density for low on-resis- tance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing re- INTERNAL SCHEMATIC DIAGRAM producibility. APPLICATIONS s DC/DC CONVERTERS s BATTERY MANAGEMENT IN NOMADIC EQUIPMENT s POWER MANAGEMENT IN CELLULAR PHONES ABSOLUTE MAXIMUM RATINGS Symbol Parameter N-CHANNEL P-CHANNEL Unit VDS Drain-source Voltage (VGS = 0) 30 V VDGR Drain-gate Voltage (RGS = 20 k) 30 V VGS Gate- source Voltage