Philips bfg31 free download

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DISCRETE SEMICONDUCTORS DATA SHEET BFG31 PNP 5 GHz wideband transistor Product specification 1995 Sep 12 Supersedes data of November 1992 NXP Semiconductors Product specification PNP 5 GHz wideband transistor BFG31 FEATURES PINNING High output voltage capability PIN DESCRIPTION lfpage 4 High gain bandwidth product 1 emitter Good thermal stability 2 base Gold metallization ensures 3 emitter excellent reliability. 4 collector DESCRIPTION PNP planar epitaxial transistor 1 2 3 mounted in a plastic SOT223 Top view MSB002 - 1 envelope. It is intended for wideband amplifier Fig.1 SOT223. applications. NPN complement is the BFG97. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCEO collector-emitter voltage open base 15 V IC DC collector current 100 mA Ptot total power dissipation up to Ts = 135 C ; note 1 1 W hFE DC current gain IC = 70 mA; VCE = 10 V; 25 Tamb = 25 C fT transition frequency IC = 70 mA; VCE = 10 V; 5.0 GHz f = 500 MHz; Tamb = 25 C GUM maximum unilateral power IC = 70 mA; VCE = 10 V; 12 dB gain f = 800 MHz; Tamb = 25 C Vo output voltage IC = 100 mA; VCE = 10 V; 600 mV RL = 75 ; Tamb = 25 C LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter 20 V VCEO collector-emitter voltage open base 15