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Descr: . Electronic Components Datasheets Active components Transistors ST stp6nk90z.pdf
Group:Electronics > Components > Transistors
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STP6NK90Z - STP6NK90ZFP STB6NK90Z N-CHANNEL 900V - 1.56 - 5.8A TO-220/TO-220FP/D2PAK Zener-Protected SuperMESHTMPower MOSFET TYPE VDSS RDS(on) ID Pw STP6NK90Z 900 V <2 5.8 A 140 W STP6NK90ZFP 900 V <2 5.8 A 30 W STB6NK90Z 900 V <2 5.8 A 140 W s TYPICAL RDS(on) = 1.56 3 2 s EXTREMELY HIGH dv/dt CAPABILITY 1 s 100% AVALANCHE TESTED s GATE CHARGE MINIMIZED TO-220 TO-220FP s VERY LOW INTRINSIC CAPACITANCES s VERY GOOD MANUFACTURING 3 1 REPEATIBILITY D2PAK DESCRIPTION The SuperMESHTM series is obtained through an extreme optimization of ST's well established strip- based PowerMESHTM layout. In addition to pushing INTERNAL SCHEMATIC DIAGRAM on-resistance significantly down, special care is tak- en to ensure a very good dv/dt capability for the most demanding applications. Such series comple- ments ST full range of high voltage MOSFETs in- cluding revolutionary MDmeshTM products. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC s LIGHTING ORDERING INFORMATION SALES TYPE MARKING PACKAGE PACKAGING STP6NK90Z P6NK90Z TO-220 TUBE STP6NK90ZFP P6NK90ZFP TO-220FP TUBE STB6NK90ZT4 B6NK90Z D2PAK TAPE & REEL March 2003 1/12 STP6NK90Z - STP6NK90ZFP - STB6NK90Z ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit STP6NK90Z / STB6NK90Z STP6NK90ZFP VDS Drain-source Voltage (VGS = 0) 900 V VDGR Drain-gate Voltage (RGS = 20 k) 900 V VGS Gate- source Voltage

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