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SEMICONDUCTOR KTD1028 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURES High DC Current Gain : hFE=800 3200 (VCE=5.0V, IC=300mA). Wide Area of Safe Operation. Low Collector Saturation Voltage. : VCE(sat)=0.17V (IC=500mA, IB=5.0mA). MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 8 V Collector Current IC 1.0 A Base Current IB 200 mA Collector Power Dissipation PC 1 W Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=60V, IE=0 - - 100 nA Emitter Cut-off Current IEBO VEB=8V, IC=0 - - 100 nA hFE(1) (Note) VCE=5.0V, IC=300mA 800 1500 3200 DC Current Gain hFE(2) VCE=5.0V, IC=1.0A 400 - - Collector-Emitter Saturration Voltage VCE(sat) IC=500mA, IB=5.0mA - 0.17 0.30 V Base-Emitter Saturation Voltage VBE(sat) IC=500mA, IB=5.0mA - 0.80 1.2 V Collector Output Capacitance Cob VCB=10V, IE=0, f=1.0MHz - 18 30 pF Transition Frequency fT VCE=10V, IC=500mA 150 250 - MHz Base-Emitter Voltage VBE VCE=5V, IC=100mA - 630 700 mV Note: hFE Classification A:800 1600, B:1200 2400, C:2000 3200 2008. 3. 11 Revision No : 3 1/2 KTD1028 2008. 3. 11 Revision No : 3 2/2