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SEMICONDUCTOR KTD1028
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
HIGH CURRENT APPLICATION.
FEATURES
High DC Current Gain
: hFE=800 3200 (VCE=5.0V, IC=300mA).
Wide Area of Safe Operation.
Low Collector Saturation Voltage.
: VCE(sat)=0.17V (IC=500mA, IB=5.0mA).
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 60 V
Collector-Emitter Voltage VCEO 50 V
Emitter-Base Voltage VEBO 8 V
Collector Current IC 1.0 A
Base Current IB 200 mA
Collector Power Dissipation PC 1 W
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=60V, IE=0 - - 100 nA
Emitter Cut-off Current IEBO VEB=8V, IC=0 - - 100 nA
hFE(1) (Note) VCE=5.0V, IC=300mA 800 1500 3200
DC Current Gain
hFE(2) VCE=5.0V, IC=1.0A 400 - -
Collector-Emitter Saturration Voltage VCE(sat) IC=500mA, IB=5.0mA - 0.17 0.30 V
Base-Emitter Saturation Voltage VBE(sat) IC=500mA, IB=5.0mA - 0.80 1.2 V
Collector Output Capacitance Cob VCB=10V, IE=0, f=1.0MHz - 18 30 pF
Transition Frequency fT VCE=10V, IC=500mA 150 250 - MHz
Base-Emitter Voltage VBE VCE=5V, IC=100mA - 630 700 mV
Note: hFE Classification A:800 1600, B:1200 2400, C:2000 3200
2008. 3. 11 Revision No : 3 1/2
KTD1028
2008. 3. 11 Revision No : 3 2/2