Jmnic 2sc1030 free download

File name 2sc1030.pdf

Power Transistors www.jmnic.com 2SC1030 Silicon NPN Transistors 1B 2E 3C Features With TO-3 package Low frequency power amplifications Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 150 V VCEO Collector to emitter voltage 80 V VEBO Emitter to base voltage 6 V IC Collector current-Continuous 6 A PD Total Power Dissipation@TC=25 50 W Tj Junction temperature 200 Tstg Storage temperature -55~200 TO-3 Electrical Characteristics Tc=25 SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT VCEO Collector-Emitter Sustaining Voltage IC=0.2A; IB=0 80 V VCER Collector-Emitter Sustaining Voltage ICEO Collector Cutoff Current VCE=30V; IB=0 2.0 mA IEBO Emitter Cutoff Current VEB=6V; IC=0 1.0 mA ICBO Collector Cutoff Current VCB=30V; IE=0 1.0 mA VEBO Base-emitter breakdown voltage VCE(sat-1) Collector-emitter saturation voltages IC=5.0A; IB=1.0A 1.5 V VCE(sat-2) Collector-emitter saturation voltages VCE(sat-3) Collector-emitter saturation voltages hFE-1 Forward current transfer ratio IC=1A; VCE=5V 35 200 hFE-2 Forward current transfer ratio IC=5A; VCE=5V 22 hFE-3 Forward current transfer ratio VBE(on) Base-emitter On voltages fT Current Gain-Bandwidth Product IC=1A; VCE=5V 10 MHz hfe Small-Signal Current Gain JMnic