Text preview for : 2sc1030.pdf part of Jmnic 2sc1030 . Electronic Components Datasheets Active components Transistors Jmnic 2sc1030.pdf
Back to : 2sc1030.pdf | Home
Power Transistors www.jmnic.com
2SC1030
Silicon NPN Transistors
1B 2E 3C
Features
With TO-3 package
Low frequency power amplifications
Absolute Maximum Ratings Tc=25
SYMBOL PARAMETER RATING UNIT
VCBO Collector to base voltage 150 V
VCEO Collector to emitter voltage 80 V
VEBO Emitter to base voltage 6 V
IC Collector current-Continuous 6 A
PD Total Power Dissipation@TC=25 50 W
Tj Junction temperature 200
Tstg Storage temperature -55~200 TO-3
Electrical Characteristics Tc=25
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT
VCEO Collector-Emitter Sustaining Voltage IC=0.2A; IB=0 80 V
VCER Collector-Emitter Sustaining Voltage
ICEO Collector Cutoff Current VCE=30V; IB=0 2.0 mA
IEBO Emitter Cutoff Current VEB=6V; IC=0 1.0 mA
ICBO Collector Cutoff Current VCB=30V; IE=0 1.0 mA
VEBO Base-emitter breakdown voltage
VCE(sat-1) Collector-emitter saturation voltages IC=5.0A; IB=1.0A 1.5 V
VCE(sat-2) Collector-emitter saturation voltages
VCE(sat-3) Collector-emitter saturation voltages
hFE-1 Forward current transfer ratio IC=1A; VCE=5V 35 200
hFE-2 Forward current transfer ratio IC=5A; VCE=5V 22
hFE-3 Forward current transfer ratio
VBE(on) Base-emitter On voltages
fT Current Gain-Bandwidth Product IC=1A; VCE=5V 10 MHz
hfe Small-Signal Current Gain
JMnic