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MJD31CT4-A Low voltage NPN power transistor Features This device is qualified for automotive application TAB Surface-mounting TO-252 power package in tape and reel 3 Complementary to the PNP type MJD32C 1 Application DPAK General purpose linear and switching TO-252 equipment Description Figure 1. Internal schematic diagram The device is manufactured in planar technology with "base island" layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Table 1. Device summary Order code Marking Package Packaging MJD31CT4-A MJD31C DPAK Tape and reel January 2010 Doc ID 13473 Rev 3 1/9 www.st.com 9 Electrical ratings MJD31CT4-A 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VCBO Collector-base voltage (IE = 0) 100 V VCEO Collector-emitter voltage (IB = 0) 100 V VEBO Emitter-base voltage (IC = 0) 5 V IC Collector current 3 A ICM Collector peak current 5 A IB Base current 1 A PTOT Total dissipation at Tc = 25