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STP14NF10 N-channel 100 V - 0.115 - 15 A - TO-220 low gate charge STripFETTM II Power MOSFET Features Type VDSS RDS(on) max ID STP14NF10 100 V < 0.13 15 A Exceptional dv/dt capability 100% avalanche tested 2 3 1 Application oriented characterization TO-220 Application Switching applications Description This Power MOSFET series realized with Figure 1. Internal schematic diagram STMicroelectronics unique STripFETTM process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high- efficiency, high-frequency isolated DC-DC converters for telecom and computer applications. It is also intended for any applications with low gate drive requirements. Table 1. Device summary Order code Marking Package Packaging STP14NF10 P14NF10 TO-220 Tube April 2008 Rev 4 1/12 www.st.com 12 Contents STP14NF10 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ... 6 3 Test circuits ... 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 STP14NF10 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 100 V VGS Gate- source voltage