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STP14NF10
N-channel 100 V - 0.115 - 15 A - TO-220
low gate charge STripFETTM II Power MOSFET
Features
Type VDSS RDS(on) max ID
STP14NF10 100 V < 0.13 15 A
Exceptional dv/dt capability
100% avalanche tested 2
3
1
Application oriented characterization
TO-220
Application
Switching applications
Description
This Power MOSFET series realized with Figure 1. Internal schematic diagram
STMicroelectronics unique STripFETTM process
has specifically been designed to minimize input
capacitance and gate charge. It is therefore
suitable as primary switch in advanced high-
efficiency, high-frequency isolated DC-DC
converters for telecom and computer applications.
It is also intended for any applications with low
gate drive requirements.
Table 1. Device summary
Order code Marking Package Packaging
STP14NF10 P14NF10 TO-220 Tube
April 2008 Rev 4 1/12
www.st.com 12
Contents STP14NF10
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................. 6
3 Test circuits .............................................. 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12
STP14NF10 Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage (VGS = 0) 100 V
VGS Gate- source voltage