Philips bf1215 free download

File name bf1215.pdf

BF1215 Dual N-channel dual gate MOSFET Rev. 01 -- 6 May 2010 Product data sheet 1. Product profile 1.1 General description The BF1215 is a combination of two dual gate MOSFET amplifiers with shared source lead, shared gate2 lead and an integrated switch. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross modulation performance during AGC. Integrated diodes between the gates and source protect against excessive input voltage surges. The transistor is availiable as a SOT363 micro-miniature plastic package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits Two low noise gain controlled amplifiers in a single package; one with full internal bias and one with partial internal bias Superior cross modulation performance during AGC High forward transfer admittance to input capacitance ratio Suitable for VHF and UHF applications: both amplifiers are optimized for VHF applications. Internal switch reduces external components 1.3 Applications Gain controlled low noise amplifiers for VHF and UHF applications with a 5 V supply Digital and analog television tuners Professional communication equipment NXP Semiconductors BF1215 Dual N-channel dual gate MOSFET 1.4 Quick reference data Table 1. Quick reference data for amplifier A and B Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage DC - - 6 V ID drain current DC - - 30 mA Ptot total power dissipation Tsp 107