bf1215.pdf part of Philips bf1215 bf1215.pdf, . Electronic Components Datasheets Active components Transistors Philips bf1215.pdf text manual preview

Text preview for : bf1215.pdf part of Philips bf1215 . Electronic Components Datasheets Active components Transistors Philips bf1215.pdf

Back to : bf1215.pdf | Home

BF1215
Dual N-channel dual gate MOSFET
Rev. 01 -- 6 May 2010 Product data sheet

1. Product profile

1.1 General description
The BF1215 is a combination of two dual gate MOSFET amplifiers with shared source
lead, shared gate2 lead and an integrated switch.

The source and substrate are interconnected. Internal bias circuits enable DC stabilization
and a very good cross modulation performance during AGC. Integrated diodes between
the gates and source protect against excessive input voltage surges. The transistor is
availiable as a SOT363 micro-miniature plastic package.

CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.

1.2 Features and benefits
Two low noise gain controlled amplifiers in a single package; one with full internal bias
and one with partial internal bias
Superior cross modulation performance during AGC
High forward transfer admittance to input capacitance ratio
Suitable for VHF and UHF applications: both amplifiers are optimized for VHF
applications.
Internal switch reduces external components

1.3 Applications
Gain controlled low noise amplifiers for VHF and UHF applications with a 5 V supply
Digital and analog television tuners
Professional communication equipment
NXP Semiconductors BF1215
Dual N-channel dual gate MOSFET

1.4 Quick reference data
Table 1. Quick reference data for amplifier A and B
Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage DC - - 6 V
ID drain current DC - - 30 mA
Ptot total power dissipation Tsp 107