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STP50NE10 N-channel 100V - 0.021 - 50A TO-220 STripFETTM Power MOSFET General features Type VDSS RDS(on) ID STP50NE10 100V <0.027 50A Exceptional high dv/dt capability 3 100% avalanche tested 2 1 Low gate charge at 100 oC TO-220 s) Application oriented characterization t( uc Description This Power MOSFET is the latest development of d STMicroelectronis unique "Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing density for low on- P ro Internal schematic diagram resistance, rugged avalanche characteristics and less critical alignment steps therefore a le te so remarkable manufacturing reproducibility. Applications - Ob (s) Switching application ct o du e Pr o let O bs codes Order Part number Marking Package Packaging STP50NE10 P50NE10 TO-220 Tube August 2006 Rev 8 1/12 www.st.com 12 Contents STP50NE10 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ... 6 3 Test circuit ... 8 4 Package mechanical dat