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Electronic components, integrated circuits, semiconductor - datasheets and schematics

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Descr: . Electronic Components Datasheets Active components Transistors ST stt13005d.pdf
Group:Electronics > Components > Transistors
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STT13005D High voltage fast-switching NPN power transistor Features Integrated antiparallel collector-emitter diode High voltage capability Minimum lot-to-lot spread for reliable operation Very high switching speed Applications 1 2 Electronic ballast for fluorescent lighting 3 Flyback and forward single transistor low SOT-32 power converters Description Figure 1. Internal schematic diagram The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies. Table 1. Device summary Order codes Marking Package Packaging STT13005D T13005D SOT-32 Tube STT13005D-K T13005D SOT-32 Bag November 2009 Doc ID 14897 Rev 2 1/10 www.st.com 10 Electrical ratings STT13005D 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VCES Collector-emitter voltage (VBE = 0) 700 V VCEO Collector-emitter voltage (IB = 0) 400 V VEBO Emitter-base voltage (IC = 0) 9 V IC Collector current 2 A ICM Collector peak current (tP < 5 ms) 4 A IB Base current 1 A IBM Base peak current (tP < 5 ms) 2 A PTOT Total dissipation at Tc = 25

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