Philips blw90 free download

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DISCRETE SEMICONDUCTORS DATA SHEET BLW90 UHF power transistor Product specification August 1986 Philips Semiconductors Product specification UHF power transistor BLW90 DESCRIPTION The transistor is housed in a 1/4" capstan envelope with a ceramic cap. N-P-N silicon planar epitaxial All leads are isolated from the stud. transistor suitable for transmitting applications in class-A, B or C in the u.h.f. and v.h.f. range for a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaranteed to withstand infinite VSWR at rated output power. High reliability is ensured by a gold sandwich metallization. QUICK REFERENCE DATA R.F. performance up to Th = 25