Philips bft92w free download

File name bft92w.pdf

DISCRETE SEMICONDUCTORS DATA SHEET BFT92W PNP 4 GHz wideband transistor Product specification May 1994 NXP Semiconductors Product specification PNP 4 GHz wideband transistor BFT92W FEATURES DESCRIPTION High power gain Silicon PNP transistor in a plastic, Gold metallization ensures SOT323 (S-mini) package. The handbook, 2 columns 3 excellent reliability BFT92W uses the same crystal as the SOT23 version, BFT92. SOT323 (S-mini) package. PINNING 1 2 APPLICATION PIN DESCRIPTION Top view MBC870 It is intended as a general purpose transistor for wideband applications 1 base Marking code: W1. up to 2 GHz. 2 emitter Fig.1 SOT323. 3 collector QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter 20 V VCEO collector-emitter voltage open base 15 V IC collector current (DC) 35 mA Ptot total power dissipation up to Ts = 93 C; note 1 300 mW hFE DC current gain IC = 15 mA; VCE = 10 V 20 50 Cre feedback capacitance IC = 0; VCB = 10 V; f = 1 MHz 0.5 pF fT transition frequency IC = 15 mA; VCE = 10 V; 4 GHz f = 500 MHz GUM maximum unilateral power gain IC = 15 mA; VCE = 10 V; 17 dB f = 500 MHz; Tamb = 25 C F noise figure IC = 5 mA; VCE = 10 V; 2.5 dB