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STW16NB60 N-CHANNEL 600V - 0.3 - 16A TO-247 PowerMeshTM MOSFET TYPE VDSS RDS(on) ID STW16NB60 600V < 0.35 16 A s TYPICAL RDS(on) = 0.3 s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED s VERY LOW INTRINSIC CAPACITANCES 3 s GATE CHARGE MINIMIZED 2 1 DESCRIPTION TO-247 Using the latest high voltage MESH OVERLAYTM process, STMicroelectronics has designed an ad- vanced family of power MOSFETs with outstanding performances. The new patent pending strip layout INTERNAL SCHEMATIC DIAGRAM coupled with the Company's proprieraty edge termi- nation structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteris- tics. APPLICATIONS s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 600 V VDGR Drain-gate Voltage (RGS = 20 k) 600 V VGS Gate- source Voltage