Philips bf1204 free download

File name bf1204.pdf

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage MBD128 BF1204 Dual N-channel dual gate MOS-FET Product specification 2010 Sep 16 Supersedes data of 2001 Apr 25 NXP Semiconductors Product specification Dual N-channel dual gate MOS-FET BF1204 FEATURES PINNING - SOT363 Two low noise gain controlled amplifiers in a single PIN DESCRIPTION package 1 gate 1 (a) Superior cross-modulation performance during AGC 2 gate 2 High forward transfer admittance 3 gate 1 (b) High forward transfer admittance to input capacitance 4 drain (b) ratio. 5 source 6 drain (a) APPLICATIONS Gain controlled low noise amplifiers for VHF and UHF applications with 3 to 9 V supply voltage, such as digital and analog television tuners and professional handbook, halfpage d (a) s d (b) 6 5 4 communications equipment. DESCRIPTION AMP AMP a b The BF1204 is a combination of two equal dual gate MOS-FET amplifiers with shared source and gate 2 leads. 1 2 3 g1 (a) g2 g1 (b) The source and substrate are interconnected. Internal bias Top view MBL252 circuits enable DC stabilization and a very good cross-modulation performance during AGC. Integrated Marking code: L3* * = - : made in Hong Kong diodes between the gates and source protect against * = p : made in Hong Kong * = t : made in Mala