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BCP52/53 MEDIUM POWER AMPLIFIER ADVANCE DATA s SILICON EPITAXIAL PLANAR PNP TRANSISTORS s MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS s GENERAL PURPOSE MAINLY INTENDED 2 FOR USE IN MEDIUM POWER INDUSTRIAL APPLICATION AND FOR AUDIO AMPLIFIER OUTPUT STAGE 3 2 s NPN COMPLEMENTS ARE BCP55 AND 1 BCP56 RESPECTIVELY SOT-223 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit BCP52 BCP53 V CBO Collector-Base Voltage (I E = 0) -60 -100 V V CEO Collector-Emitter Voltage (I B = 0) -60 -80 V V CER Collector-Emitter Voltage (R BE = 1K) -60 -100 V V EBO Emitter-Base Voltage (I C = 0) -5 V IC Collector Current -1 A I CM Collector Peak Current (t p < 5 ms) -1.5 A IB Base Current -0.1 A I BM Base Peak Current (t p < ms) -0.2 A P tot Total Dissipation at T c = 25 o C 2 W o T stg Storage Temperature -65 to 150 C o Tj Max. Operating Junction Temperature 150 C October 1997 1/4 BCP52/53 THERMAL DATA o R thj-amb