Philips bfu690f free download

File name bfu690f.pdf

BFU690F NPN wideband silicon RF transistor Rev. 1 -- 16 December 2010 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. 1.2 Features and benefits Low noise high linearity microwave transistor High output third-order intercept point 34 dBm at 1.8 GHz 40 GHz fT silicon technology 1.3 Applications Ka band oscillators DRO's C-band high output buffer amplifier ZigBee LTE, cellular, UMTS NXP Semiconductors BFU690F NPN wideband silicon RF transistor 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCBO collector-base voltage open emitter - - 16 V VCEO collector-emitter voltage open base - - 5.5 V VEBO emitter-base voltage open collector - - 2.5 V IC collector current - 70 100 mA Ptot total power dissipation Tsp 90 C [1] - - 230 mW hFE DC current gain IC = 20 mA; VCE = 2 V; 90 135 180 Tj = 25 C CCBS collector-base VCB = 2 V; f = 1 MHz - 404 -