File information: | |
File name: | msc81325.pdf [preview msc81325] |
Size: | 73 kB |
Extension: | |
Mfg: | ST |
Model: | msc81325 🔎 |
Original: | msc81325 🔎 |
Descr: | . Electronic Components Datasheets Active components Transistors ST msc81325.pdf |
Group: | Electronics > Components > Transistors |
Uploaded: | 09-06-2020 |
User: | Anonymous |
Multipart: | No multipart |
Information about the files in archive: | ||
Decompress result: | OK | |
Extracted files: | 1 | |
File name msc81325.pdf MSC81325M RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . REFRACTORY/GOLD METALLIZATION PRELIMINARY DATA . . EMITTER BALLASTED RUGGEDIZED VSWR :1 . . INPUT/OUTPUT MATCHING OVERLAY GEOMETRY . METAL/CERAMIC HERMETIC PACKAGE POUT = 325 W MIN. WITH 6.7 dB GAIN .400 x .400 2NLFL (S042) hermetically sealed ORDER CODE BRANDING MSC81325M 81325M PIN CONNECTION DESCRIPTION The MSC81325M device is a high power pulsed transistor specifically designed for DME/TACAN avionics applications. This device is capable of withstanding an infinite load VSWR at any phase angle under full rated conditions. Low RF thermal resistance and semi- automatic bonding techniques ensure high relia- bility and product consistency. The MSC81325M is housed in the industry-stand- 1. Collector 3. Emitter ard AMPACTM metal/ceramic hermetic package 2. Base 4. Base with internal input/output matching structures. ABSOLUTE MAXIMUM RATINGS (T case = 25 |
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