Philips pbhv8118t free download

File name pbhv8118t.pdf

PBHV8118T 180 V, 1 A NPN high-voltage low VCEsat (BISS) transistor Rev. 01 -- 7 May 2010 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. 1.2 Features and benefits High voltage Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC AEC-Q101 qualified Small SMD plastic package 1.3 Applications LED driver for LED chain module LCD backlighting Automotive power management Hook switch for wired telecom Switch Mode Power Supply (SMPS) 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - 180 V IC collector current - - 1 A hFE DC current gain VCE = 10 V; [1] 100 250 - IC = 50 mA [1] Pulse test: tp 300 s; 0.02. NXP Semiconductors PBHV8118T 180 V, 1 A NPN high-voltage low VCEsat (BISS) transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1 base 3 3 2 emitter 3 collector 1 1 2 2 sym021 3. Ordering information