Philips bfg97 cnv free download

File name bfg97_cnv.pdf

DISCRETE SEMICONDUCTORS DATA SHEET BFG97 NPN 5 GHz wideband transistor Product specification September 1995 NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFG97 DESCRIPTION PINNING NPN planar epitaxial transistor age 4 PIN DESCRIPTION mounted in a plastic SOT223 1 emitter envelope. It features excellent output voltage 2 base capabilities, and is primarily intended 3 emitter for use in MATV applications. 4 collector PNP complement is the BFG31. 1 2 3 Top view MSB002 - 1 Fig.1 SOT223. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter 20 V VCEO collector-emitter voltage open base 15 V IC DC collector current 100 mA Ptot total power dissipation up to Ts = 125 C (note 1) 1 W hFE DC current gain IC = 70 mA; VCE = 10 V; Tj = 25 C 25 80 fT transition frequency IC = 70 mA; VCE = 10 V; 5.5 GHz f = 500 MHz; Tamb = 25 C GUM maximum unilateral power gain IC = 70 mA; VCE = 10 V; 16 dB f = 500 MHz; Tamb = 25 C IC = 70 mA; VCE = 10 V; 12 dB f = 800 MHz; Tamb = 25 C Vo output voltage IC = 70 mA; VCE = 10 V; 700 mV dim = 60 dB; RL = 75 ; f(pqr) = 793.25 MHz; Tamb