ST buld3n7t4 free download

File name buld3n7t4.pdf

BULD3N7T4 Medium voltage fast-switching NPN Power Transistor General features Medium voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed In compliance with the 2002/93/EC European 3 Directive 1 Description DPAK t( s) The device is manufactured using high voltage Multi-Epitaxial Planar technology for high d uc switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar P ro Internal schematic diagram te edge termination to enhance switching speeds while maintaining the wide RBSOA. le so The device is expressly designed for a new solution to be used in compact fluorescent lamps, Ob H.F. ballast voltage FED where it is coupled with the BULD3P5T4, its complementary PNP transistor. - Applications ct (s) du Electronic ballast for fluorescent lighting o e Pr let so Order codes b O Part Number BULD3N7T4 Marking BULD3N7 Package DPAK Packing Tape & Reel June 2006 Rev 1 1/10 www.st.com 10 BULD3N7T4 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.2 Test circuits . . . . . . . . . .