ST stgw12nb60h free download

File name stgw12nb60h.pdf

STGW12NB60H N-CHANNEL 12A - 600V - TO-247 PowerMESHTM IGBT TYPE VCES VCE(sat) IC STGW12NB60H 600 V < 2.8 V 12 A s HIGH INPUT IMPEDANCE s LOW ON-VOLTAGE DROP (Vcesat) s OFF LOSSES INCLUDE TAIL CURRENT s LOW GATE CHARGE 3 2 s HIGH CURRENT CAPABILITY 1 s VERY HIGH FREQUENCY OPERATION TO-247 s CO-PACKAGED WITH TURBOSWITCHT s TYPICAL SHORT CIRCUIT WITHSTAND TIME 5MICROS S-family, 4 micro H family s ANTIPARALLEL DIODE DESCRIPTION INTERNAL SCHEMATIC DIAGRAM Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has de- signed an advanced family of IGBTs, the Power- MESHTM IGBTs, with outstanding perfomances. The suffix "H" identifies a family optimized for high frequency applications (up to 50kHz)in order to achieve very high switching performances (reduced tfall) mantaining a low voltage drop. APPLICATIONS s HIGH FREQUENCY MOTOR CONTROLS s SMPS and PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES s UPS ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCES Collector-Emitter Voltage (VGS = 0) 600 V VECR Emitter-Collector Voltage 20 V VGE Gate-Emitter Voltage