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BDW51C BDW52C SILICON NPN SWITCHING TRANSISTORS s SGS-THOMSON PREFERRED SALESTYPES s COMPLEMENTARY PNP - NPN DEVICES s HIGH CURRENT CAPABILITY s FAST SWITCHING SPEED s HIGH DC CURRENT GAIN APPLICATIONS s LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT 1 2 DESCRIPTION The BDW51C is a silicon epitaxial-base NPN transistor in Jedec TO-3 metal case. It is intended TO-3 for use in power linear and switching applications. The complementary PNP is the BDW52C. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit NPN BDW51C PNP BDW52C V CBO Collector-Base Voltage (I E = 0) 100 V V CES Collector-Emitter Voltage (V BE = 0) 100 V V CEO Collector-Emitter Voltage (I B = 0) 100 V V EBO Emitter-Base Voltage (I C = 0) 5 V IC Collector Current 15 A I CM Collector Peak Current (repetitive) 20 A IB Base Current 7 A P tot Total Dissipation at T c = 25 o C 125 W o T stg Storage Temperature -65 to 200 C o Tj Max. Operating Junction Temperature 200 C For PNP types voltage and current values are negative. July 1997 1/4 BDW51C / BDW52C THERMAL DATA o R thj-case Thermal Resistance Junction-case Max 1.4 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit I CBO Collector Cut-off V CB = 100 V 500